Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
340 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Latime
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
115 nC @ 10 V
Inaltime
15.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.6V
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 18,55
€ 3,71 Buc. (Intr-un pachet de 5) (fara TVA)
€ 22,45
€ 4,489 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 18,55
€ 3,71 Buc. (Intr-un pachet de 5) (fara TVA)
€ 22,45
€ 4,489 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 20 | € 3,71 | € 18,55 |
| 25 - 45 | € 3,30 | € 16,50 |
| 50 - 120 | € 3,05 | € 15,25 |
| 125 - 245 | € 2,81 | € 14,05 |
| 250+ | € 2,57 | € 12,85 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
340 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Latime
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
115 nC @ 10 V
Inaltime
15.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.6V
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

