Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Serie
SIPMOS®
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.57mm
Lungime
10.36mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Inaltime
15.95mm
Tara de origine
Malaysia
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 84,50
€ 1,69 Each (In a Tube of 50) (fara TVA)
€ 102,24
€ 2,045 Each (In a Tube of 50) (cu TVA)
50
€ 84,50
€ 1,69 Each (In a Tube of 50) (fara TVA)
€ 102,24
€ 2,045 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Serie
SIPMOS®
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.57mm
Lungime
10.36mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Inaltime
15.95mm
Tara de origine
Malaysia
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


