Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.5mm
Latime
6.22mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.3mm
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,90
€ 0,59 Buc. (Intr-un pachet de 10) (fara TVA)
€ 7,02
€ 0,702 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 5,90
€ 0,59 Buc. (Intr-un pachet de 10) (fara TVA)
€ 7,02
€ 0,702 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,59 | € 5,90 |
100 - 240 | € 0,56 | € 5,60 |
250 - 490 | € 0,53 | € 5,30 |
500 - 990 | € 0,50 | € 5,00 |
1000+ | € 0,47 | € 4,70 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.5mm
Latime
6.22mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.3mm
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.