Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Serie
Si4435DYPbF
Tip pachet
SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
4mm
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0
€ 2,40
€ 0,24 Buc. (Livrat pe rola) (fara TVA)
€ 2,86
€ 0,286 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 2,40
€ 0,24 Buc. (Livrat pe rola) (fara TVA)
€ 2,86
€ 0,286 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Serie
Si4435DYPbF
Tip pachet
SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
4mm
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0