Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
55 V
Serie
HEXFET
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
25 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Inaltime
8.77mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 55,00
€ 1,10 Each (In a Tube of 50) (fara TVA)
€ 65,45
€ 1,309 Each (In a Tube of 50) (cu TVA)
50
€ 55,00
€ 1,10 Each (In a Tube of 50) (fara TVA)
€ 65,45
€ 1,309 Each (In a Tube of 50) (cu TVA)
50
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,10 | € 55,00 |
100 - 200 | € 0,85 | € 42,50 |
250 - 450 | € 0,79 | € 39,50 |
500 - 1200 | € 0,73 | € 36,50 |
1250+ | € 0,67 | € 33,50 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
55 V
Serie
HEXFET
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
25 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Inaltime
8.77mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.