Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Serie
HEXFET
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
3.4 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 1,75
€ 0,35 Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,08
€ 0,416 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 1,75
€ 0,35 Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,08
€ 0,416 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Serie
HEXFET
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
3.4 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.