Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
171 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-220AB
Serie
HEXFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10.67mm
Typical Gate Charge @ Vgs
40 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Latime
4.83mm
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Tara de origine
China
Detalii produs
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 41,00
€ 0,82 Each (In a Tube of 50) (fara TVA)
€ 48,79
€ 0,976 Each (In a Tube of 50) (cu TVA)
50
€ 41,00
€ 0,82 Each (In a Tube of 50) (fara TVA)
€ 48,79
€ 0,976 Each (In a Tube of 50) (cu TVA)
50
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 0,82 | € 41,00 |
100 - 200 | € 0,63 | € 31,50 |
250 - 450 | € 0,60 | € 30,00 |
500 - 1200 | € 0,56 | € 28,00 |
1250+ | € 0,50 | € 25,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
171 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-220AB
Serie
HEXFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10.67mm
Typical Gate Charge @ Vgs
40 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Latime
4.83mm
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Tara de origine
China
Detalii produs
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.