Infineon LogicFET N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Serie
LogicFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
20 nC @ 5 V
Latime
4.69mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.54mm
Inaltime
8.77mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 0,99
€ 0,99 Buc. (fara TVA)
€ 1,20
€ 1,20 Buc. (cu TVA)
Standard
1
€ 0,99
€ 0,99 Buc. (fara TVA)
€ 1,20
€ 1,20 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 1 - 24 | € 0,99 |
| 25 - 49 | € 0,88 |
| 50 - 99 | € 0,81 |
| 100 - 249 | € 0,76 |
| 250+ | € 0,70 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Serie
LogicFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
20 nC @ 5 V
Latime
4.69mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.54mm
Inaltime
8.77mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

