Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
294 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.65mm
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 1.176,00
€ 1,47 Buc. (Pe o rola de 800) (fara TVA)
€ 1.399,44
€ 1,749 Buc. (Pe o rola de 800) (cu TVA)
800
€ 1.176,00
€ 1,47 Buc. (Pe o rola de 800) (fara TVA)
€ 1.399,44
€ 1,749 Buc. (Pe o rola de 800) (cu TVA)
800
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
800 - 800 | € 1,47 | € 1.176,00 |
1600+ | € 1,39 | € 1.112,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
294 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.65mm
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.