Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
D2PAK-7
Montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
290 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 7,14
€ 3,57 Buc. (Intr-un pachet de 2) (fara TVA)
€ 8,50
€ 4,248 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 7,14
€ 3,57 Buc. (Intr-un pachet de 2) (fara TVA)
€ 8,50
€ 4,248 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 18 | € 3,57 | € 7,14 |
20 - 48 | € 3,15 | € 6,30 |
50 - 98 | € 2,90 | € 5,80 |
100 - 198 | € 2,67 | € 5,34 |
200+ | € 2,44 | € 4,88 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
D2PAK-7
Montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
290 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.