Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
200 V
Serie
HEXFET
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
580 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
180 nC @ 10 V
Latime
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.9mm
Temperatura maxima de lucru
+175 °C
Inaltime
20.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 6,09
€ 6,09 Each (Supplied in a Tube) (fara TVA)
€ 7,25
€ 7,25 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
€ 6,09
€ 6,09 Each (Supplied in a Tube) (fara TVA)
€ 7,25
€ 7,25 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
200 V
Serie
HEXFET
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
580 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
180 nC @ 10 V
Latime
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.9mm
Temperatura maxima de lucru
+175 °C
Inaltime
20.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.