Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
172 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
142 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Lungime
15.87mm
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
20.7mm
Temperatura minima de lucru
-55 °C
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 25,80
€ 1,29 Each (Supplied in a Tube) (fara TVA)
€ 30,70
€ 1,535 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
20
€ 25,80
€ 1,29 Each (Supplied in a Tube) (fara TVA)
€ 30,70
€ 1,535 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
20
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Cantitate | Pret unitar | Per Tub |
---|---|---|
20 - 98 | € 1,29 | € 2,58 |
100 - 148 | € 1,25 | € 2,50 |
150 - 298 | € 1,20 | € 2,40 |
300+ | € 1,16 | € 2,32 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
172 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
142 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Lungime
15.87mm
Latime
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
20.7mm
Temperatura minima de lucru
-55 °C
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.