Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
25 V
Serie
HEXFET
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
1.4mm
Lungime
3.04mm
Typical Gate Charge @ Vgs
5.4 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.02mm
Tara de origine
Philippines
Detalii produs
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 180,00
€ 0,06 Buc. (Pe o rola de 3000) (fara TVA)
€ 214,20
€ 0,071 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 180,00
€ 0,06 Buc. (Pe o rola de 3000) (fara TVA)
€ 214,20
€ 0,071 Buc. (Pe o rola de 3000) (cu TVA)
3000
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
25 V
Serie
HEXFET
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
1.4mm
Lungime
3.04mm
Typical Gate Charge @ Vgs
5.4 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.02mm
Tara de origine
Philippines
Detalii produs
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.