Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
150 V
Serie
HEXFET
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Latime
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.66mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.02mm
Temperatura minima de lucru
-55 °C
Detalii produs
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 9,20
€ 1,84 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,95
€ 2,19 Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 9,20
€ 1,84 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,95
€ 2,19 Buc. (Intr-un pachet de 5) (cu TVA)
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 1,84 | € 9,20 |
25 - 45 | € 1,52 | € 7,60 |
50 - 95 | € 1,35 | € 6,75 |
100 - 245 | € 1,20 | € 6,00 |
250+ | € 1,09 | € 5,45 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
150 V
Serie
HEXFET
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Latime
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.66mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.02mm
Temperatura minima de lucru
-55 °C
Detalii produs
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.