Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
375 A
Maximum Drain Source Voltage
60 V
Tip pachet
DirectFET ISOMETRIC
Serie
DirectFET, HEXFET
Timp montare
Surface Mount
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
9.15mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Latime
7.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Inaltime
0.49mm
Tara de origine
Mexico
Detalii produs
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 8.360,00
€ 2,09 Buc. (Pe o rola de 4000) (fara TVA)
€ 10.115,60
€ 2,529 Buc. (Pe o rola de 4000) (cu TVA)
4000
€ 8.360,00
€ 2,09 Buc. (Pe o rola de 4000) (fara TVA)
€ 10.115,60
€ 2,529 Buc. (Pe o rola de 4000) (cu TVA)
Informatii despre stoc temporar indisponibile
4000
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
375 A
Maximum Drain Source Voltage
60 V
Tip pachet
DirectFET ISOMETRIC
Serie
DirectFET, HEXFET
Timp montare
Surface Mount
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
9.15mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Latime
7.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Inaltime
0.49mm
Tara de origine
Mexico
Detalii produs
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


