Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
12 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
38 nC @ 4.5 V
Latime
4mm
Transistor Material
Si
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
Detalii produs
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
20
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
20
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
12 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
38 nC @ 4.5 V
Latime
4mm
Transistor Material
Si
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
Detalii produs
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


