Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Serie
DirectFET, HEXFET
Tip pachet
DirectFET ISOMETRIC
Timp montare
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.05mm
Number of Elements per Chip
1
Lungime
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.5mm
Temperatura minima de lucru
-40 °C
Forward Diode Voltage
1.3V
Detalii produs
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 37,80
€ 1,89 Buc. (Livrat pe rola) (fara TVA)
€ 44,98
€ 2,249 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 37,80
€ 1,89 Buc. (Livrat pe rola) (fara TVA)
€ 44,98
€ 2,249 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 48 | € 1,89 | € 3,78 |
50 - 98 | € 1,74 | € 3,48 |
100 - 198 | € 1,60 | € 3,20 |
200+ | € 1,47 | € 2,94 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Serie
DirectFET, HEXFET
Tip pachet
DirectFET ISOMETRIC
Timp montare
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.05mm
Number of Elements per Chip
1
Lungime
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.5mm
Temperatura minima de lucru
-40 °C
Forward Diode Voltage
1.3V
Detalii produs
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.