Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
0.0065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
€ 15,10
€ 1,51 Buc. (Intr-un pachet de 10) (fara TVA)
€ 17,97
€ 1,797 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 15,10
€ 1,51 Buc. (Intr-un pachet de 10) (fara TVA)
€ 17,97
€ 1,797 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 1,51 | € 15,10 |
50 - 90 | € 1,42 | € 14,20 |
100 - 240 | € 1,35 | € 13,50 |
250 - 490 | € 1,28 | € 12,80 |
500+ | € 1,18 | € 11,80 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
0.0065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon