Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ C6
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
21.1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 19,72
€ 4,93 Buc. (Intr-un pachet de 4) (fara TVA)
€ 23,86
€ 5,965 Buc. (Intr-un pachet de 4) (cu TVA)
Standard
4
€ 19,72
€ 4,93 Buc. (Intr-un pachet de 4) (fara TVA)
€ 23,86
€ 5,965 Buc. (Intr-un pachet de 4) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
4
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 4 - 16 | € 4,93 | € 19,72 |
| 20 - 96 | € 4,15 | € 16,60 |
| 100 - 196 | € 3,56 | € 14,24 |
| 200 - 496 | € 3,36 | € 13,44 |
| 500+ | € 2,96 | € 11,84 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ C6
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
21.1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


