Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ C6
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Latime
5.21mm
Lungime
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
21.1mm
Tara de origine
China
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 119,10
€ 3,97 Each (In a Tube of 30) (fara TVA)
€ 144,11
€ 4,804 Each (In a Tube of 30) (cu TVA)
30
€ 119,10
€ 3,97 Each (In a Tube of 30) (fara TVA)
€ 144,11
€ 4,804 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 30 - 30 | € 3,97 | € 119,10 |
| 60 - 120 | € 3,73 | € 111,90 |
| 150 - 270 | € 3,54 | € 106,20 |
| 300 - 570 | € 3,35 | € 100,50 |
| 600+ | € 3,09 | € 92,70 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ C6
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Latime
5.21mm
Lungime
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
21.1mm
Tara de origine
China
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


