Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Serie
CoolMOS™ C6
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
119 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
16.13mm
Number of Elements per Chip
1
Latime
5.21mm
Temperatura minima de lucru
-55 °C
Inaltime
21.1mm
Tara de origine
China
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 144,00
€ 4,80 Each (In a Tube of 30) (fara TVA)
€ 174,24
€ 5,808 Each (In a Tube of 30) (cu TVA)
30
€ 144,00
€ 4,80 Each (In a Tube of 30) (fara TVA)
€ 174,24
€ 5,808 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Serie
CoolMOS™ C6
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
119 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
16.13mm
Number of Elements per Chip
1
Latime
5.21mm
Temperatura minima de lucru
-55 °C
Inaltime
21.1mm
Tara de origine
China
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


