Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
77 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Serie
CoolMOS™ C6
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
481 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Lungime
16.13mm
Typical Gate Charge @ Vgs
290 nC @ 10 V
Latime
5.21mm
Inaltime
21.1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 60,75
€ 12,15 Each (Supplied in a Tube) (fara TVA)
€ 73,51
€ 14,70 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
€ 60,75
€ 12,15 Each (Supplied in a Tube) (fara TVA)
€ 73,51
€ 14,70 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 5 - 9 | € 12,15 |
| 10 - 24 | € 11,79 |
| 25 - 49 | € 10,92 |
| 50+ | € 10,07 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
77 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Serie
CoolMOS™ C6
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
481 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Lungime
16.13mm
Typical Gate Charge @ Vgs
290 nC @ 10 V
Latime
5.21mm
Inaltime
21.1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


