Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
37.9 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ P6
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
278 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.57mm
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
15.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.9V
Tara de origine
China
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 127,00
€ 2,54 Each (In a Tube of 50) (fara TVA)
€ 153,67
€ 3,073 Each (In a Tube of 50) (cu TVA)
50
€ 127,00
€ 2,54 Each (In a Tube of 50) (fara TVA)
€ 153,67
€ 3,073 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
37.9 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ P6
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
278 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.57mm
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
15.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.9V
Tara de origine
China
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


