Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
37.9 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ P6
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.57mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Inaltime
15.95mm
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 3,30
€ 3,30 Buc. (fara TVA)
€ 3,99
€ 3,99 Buc. (cu TVA)
Standard
1
€ 3,30
€ 3,30 Buc. (fara TVA)
€ 3,99
€ 3,99 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
37.9 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ P6
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.57mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Inaltime
15.95mm
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


