Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ C6
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.65mm
Typical Gate Charge @ Vgs
119 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.9mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.9V
Inaltime
16.15mm
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 57,30
€ 5,73 Each (Supplied in a Tube) (fara TVA)
€ 69,33
€ 6,933 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 57,30
€ 5,73 Each (Supplied in a Tube) (fara TVA)
€ 69,33
€ 6,933 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 10 - 18 | € 5,73 | € 11,46 |
| 20 - 48 | € 5,29 | € 10,58 |
| 50 - 98 | € 4,92 | € 9,84 |
| 100+ | € 4,50 | € 9,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ C6
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.65mm
Typical Gate Charge @ Vgs
119 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.9mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.9V
Inaltime
16.15mm
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


