Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Serie
OptiMOS™ 3
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
15.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 259,00
€ 2,59 Each (Supplied in a Tube) (fara TVA)
€ 313,39
€ 3,134 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
100
€ 259,00
€ 2,59 Each (Supplied in a Tube) (fara TVA)
€ 313,39
€ 3,134 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 100 - 198 | € 2,59 | € 5,18 |
| 200 - 498 | € 2,43 | € 4,86 |
| 500 - 998 | € 2,14 | € 4,28 |
| 1000+ | € 2,04 | € 4,08 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Serie
OptiMOS™ 3
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
15.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


