Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
100 V
Serie
OptiMOS™ 2
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
15.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.57mm
Lungime
10.36mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
15.95mm
Tara de origine
China
Detalii produs
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 63,50
€ 1,27 Each (In a Tube of 50) (fara TVA)
€ 75,56
€ 1,511 Each (In a Tube of 50) (cu TVA)
50
€ 63,50
€ 1,27 Each (In a Tube of 50) (fara TVA)
€ 75,56
€ 1,511 Each (In a Tube of 50) (cu TVA)
50
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,27 | € 63,50 |
100 - 200 | € 1,02 | € 51,00 |
250 - 450 | € 0,98 | € 49,00 |
500 - 950 | € 0,94 | € 47,00 |
1000+ | € 0,91 | € 45,50 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
100 V
Serie
OptiMOS™ 2
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
15.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.57mm
Lungime
10.36mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
15.95mm
Tara de origine
China
Detalii produs
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.