Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Serie
OptiMOS™ 3
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
37 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
15.95mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 390,00
€ 0,78 Each (In a Tube of 500) (fara TVA)
€ 471,90
€ 0,944 Each (In a Tube of 500) (cu TVA)
500
€ 390,00
€ 0,78 Each (In a Tube of 500) (fara TVA)
€ 471,90
€ 0,944 Each (In a Tube of 500) (cu TVA)
Informatii despre stoc temporar indisponibile
500
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 500 - 500 | € 0,78 | € 390,00 |
| 1000 - 1000 | € 0,74 | € 370,00 |
| 1500+ | € 0,68 | € 340,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Serie
OptiMOS™ 3
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.36mm
Typical Gate Charge @ Vgs
37 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
15.95mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


