Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
40 V
Serie
OptiMOS T
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Temperatura maxima de lucru
+175 °C
Inaltime
2.3mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
2
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
2
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
40 V
Serie
OptiMOS T
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Temperatura maxima de lucru
+175 °C
Inaltime
2.3mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


