Infineon OptiMOS™-T N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
100 V
Serie
OptiMOS™-T
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.3mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 1.250,00
€ 0,50 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.512,50
€ 0,605 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.250,00
€ 0,50 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.512,50
€ 0,605 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
100 V
Serie
OptiMOS™-T
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.3mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

