Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
23.8 A
Maximum Drain Source Voltage
650 V
Tip pachet
D2PAK (TO-263)
Serie
CoolMOS™ P6
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
176 W
Maximum Gate Source Voltage
-30 V, +30 V
Lungime
10.31mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.57mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Inaltime
9.45mm
Tara de origine
China
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 1.340,00
€ 1,34 Buc. (Pe o rola de 1000) (fara TVA)
€ 1.621,40
€ 1,621 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 1.340,00
€ 1,34 Buc. (Pe o rola de 1000) (fara TVA)
€ 1.621,40
€ 1,621 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
23.8 A
Maximum Drain Source Voltage
650 V
Tip pachet
D2PAK (TO-263)
Serie
CoolMOS™ P6
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
176 W
Maximum Gate Source Voltage
-30 V, +30 V
Lungime
10.31mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.57mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Inaltime
9.45mm
Tara de origine
China
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


