Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
250 V
Tip pachet
D2PAK (TO-263)
Serie
OptiMOS™-T
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.25mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10mm
Inaltime
4.4mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 29,60
€ 1,48 Buc. (Intr-un pachet de 20) (fara TVA)
€ 35,82
€ 1,791 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
€ 29,60
€ 1,48 Buc. (Intr-un pachet de 20) (fara TVA)
€ 35,82
€ 1,791 Buc. (Intr-un pachet de 20) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
20
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
250 V
Tip pachet
D2PAK (TO-263)
Serie
OptiMOS™-T
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.25mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10mm
Inaltime
4.4mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


