Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Serie
OptiMOS™ 3
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
8.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.45mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 105,00
€ 1,05 Buc. (Livrat pe rola) (fara TVA)
€ 124,95
€ 1,25 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 105,00
€ 1,05 Buc. (Livrat pe rola) (fara TVA)
€ 124,95
€ 1,25 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 225 | € 1,05 | € 26,25 |
250 - 475 | € 0,98 | € 24,50 |
500 - 975 | € 0,90 | € 22,50 |
1000+ | € 0,71 | € 17,75 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Serie
OptiMOS™ 3
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
8.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.45mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.