Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220 FP
Serie
OptiMOS™ 3
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
9.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
36 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Lungime
10.65mm
Number of Elements per Chip
1
Latime
4.85mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
16.15mm
Tara de origine
China
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 42,50
€ 0,85 Each (In a Tube of 50) (fara TVA)
€ 50,58
€ 1,012 Each (In a Tube of 50) (cu TVA)
50
€ 42,50
€ 0,85 Each (In a Tube of 50) (fara TVA)
€ 50,58
€ 1,012 Each (In a Tube of 50) (cu TVA)
50
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 0,85 | € 42,50 |
100 - 200 | € 0,65 | € 32,50 |
250 - 450 | € 0,62 | € 31,00 |
500 - 1200 | € 0,59 | € 29,50 |
1250+ | € 0,51 | € 25,50 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220 FP
Serie
OptiMOS™ 3
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
9.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
36 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Lungime
10.65mm
Number of Elements per Chip
1
Latime
4.85mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
16.15mm
Tara de origine
China
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.