Documente tehnice
Specificatii
Marca
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
925 A
Maximum Drain Source Voltage
3300 V
Serie
XHP
Tip pachet
Tray
Timp montare
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Tara de origine
Germany
Informatii indisponibile despre stoc
€ 8.459,43
€ 8.459,43 Buc. (fara TVA)
€ 10.066,72
€ 10.066,72 Buc. (cu TVA)
Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
1
€ 8.459,43
€ 8.459,43 Buc. (fara TVA)
€ 10.066,72
€ 10.066,72 Buc. (cu TVA)
Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
Informatii indisponibile despre stoc
1
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Documente tehnice
Specificatii
Marca
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
925 A
Maximum Drain Source Voltage
3300 V
Serie
XHP
Tip pachet
Tray
Timp montare
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Tara de origine
Germany