Documente tehnice
Specificatii
Marca
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
1.8 kA
Maximum Drain Source Voltage
1700 V
Tip pachet
Tray
Serie
XHP
Montare
Screw Mount
Channel Mode
Depletion
Number of Elements per Chip
2
Transistor Material
SiC
Tara de origine
Germany
Informatii indisponibile despre stoc
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Informatii indisponibile despre stoc
P.O.A.
Dual SiC Dual N-Channel MOSFET, 1.8 kA, 1700 V Depletion Tray Infineon FF1800XTR17T2P5BPSA1
1
P.O.A.
Dual SiC Dual N-Channel MOSFET, 1.8 kA, 1700 V Depletion Tray Infineon FF1800XTR17T2P5BPSA1
Informatii indisponibile despre stoc
1
Documente tehnice
Specificatii
Marca
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
1.8 kA
Maximum Drain Source Voltage
1700 V
Tip pachet
Tray
Serie
XHP
Montare
Screw Mount
Channel Mode
Depletion
Number of Elements per Chip
2
Transistor Material
SiC
Tara de origine
Germany