Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Serie
OptiMOS P
Tip pachet
TSDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
3.1V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
3.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.4mm
Typical Gate Charge @ Vgs
43.2 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 11,80
€ 0,59 Buc. (Livrat pe rola) (fara TVA)
€ 14,28
€ 0,714 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 11,80
€ 0,59 Buc. (Livrat pe rola) (fara TVA)
€ 14,28
€ 0,714 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
20
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Serie
OptiMOS P
Tip pachet
TSDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
3.1V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
3.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.4mm
Typical Gate Charge @ Vgs
43.2 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


