Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.9mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.24V
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 15,00
€ 0,06 Buc. (Livrat pe rola) (fara TVA)
€ 18,15
€ 0,073 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
250
€ 15,00
€ 0,06 Buc. (Livrat pe rola) (fara TVA)
€ 18,15
€ 0,073 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
250
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.9mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.24V
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


