Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323
Serie
OptiMOS™ 2
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.75V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Lungime
2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Latime
1.25mm
Inaltime
0.8mm
Frecventa minima de auto-rezonanta
-40 °C
Forward Diode Voltage
1.1V
Detalii produs
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 21,00
€ 0,07 Buc. (Livrat pe rola) (fara TVA)
€ 25,41
€ 0,085 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
300
€ 21,00
€ 0,07 Buc. (Livrat pe rola) (fara TVA)
€ 25,41
€ 0,085 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
300
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323
Serie
OptiMOS™ 2
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.75V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Lungime
2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Latime
1.25mm
Inaltime
0.8mm
Frecventa minima de auto-rezonanta
-40 °C
Forward Diode Voltage
1.1V
Detalii produs
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


