Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Serie
OptiMOS™ 2
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.75V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Typical Gate Charge @ Vgs
1.7 nC @ 2.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Automotive Standard
AEC-Q101
Detalii produs
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 37,50
€ 0,15 Buc. (Pe o rola de 250) (fara TVA)
€ 45,38
€ 0,182 Buc. (Pe o rola de 250) (cu TVA)
250
€ 37,50
€ 0,15 Buc. (Pe o rola de 250) (fara TVA)
€ 45,38
€ 0,182 Buc. (Pe o rola de 250) (cu TVA)
Informatii despre stoc temporar indisponibile
250
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Serie
OptiMOS™ 2
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.75V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Typical Gate Charge @ Vgs
1.7 nC @ 2.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Automotive Standard
AEC-Q101
Detalii produs
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


