Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.5mm
Number of Elements per Chip
1
Lungime
6.5mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.6mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 310,00
€ 0,31 Buc. (Pe o rola de 1000) (fara TVA)
€ 368,90
€ 0,369 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 310,00
€ 0,31 Buc. (Pe o rola de 1000) (fara TVA)
€ 368,90
€ 0,369 Buc. (Pe o rola de 1000) (cu TVA)
1000
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
1000 - 1000 | € 0,31 | € 310,00 |
2000 - 2000 | € 0,29 | € 290,00 |
3000+ | € 0,27 | € 270,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.5mm
Number of Elements per Chip
1
Lungime
6.5mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.6mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.