Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Tip pachet
TSOP-6
Serie
OptiMOS P
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
2.9mm
Typical Gate Charge @ Vgs
5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
1.6mm
Transistor Material
Si
Number of Elements per Chip
2
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 16,40
€ 0,41 Buc. (Intr-un pachet de 40) (fara TVA)
€ 19,52
€ 0,488 Buc. (Intr-un pachet de 40) (cu TVA)
Standard
40
€ 16,40
€ 0,41 Buc. (Intr-un pachet de 40) (fara TVA)
€ 19,52
€ 0,488 Buc. (Intr-un pachet de 40) (cu TVA)
Standard
40
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Tip pachet
TSOP-6
Serie
OptiMOS P
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
2.9mm
Typical Gate Charge @ Vgs
5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
1.6mm
Transistor Material
Si
Number of Elements per Chip
2
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.