Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
60 V
Serie
OptiMOS™
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.35mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 6,50
€ 0,26 Buc. (Intr-un pachet de 25) (fara TVA)
€ 7,74
€ 0,309 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 6,50
€ 0,26 Buc. (Intr-un pachet de 25) (fara TVA)
€ 7,74
€ 0,309 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
60 V
Serie
OptiMOS™
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.35mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.