Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
202 A
Maximum Drain Source Voltage
1200 V
Serie
AIM
Tip pachet
PG-TO247-4
Timp montare
Through Hole
Numar pini
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Tara de origine
China
Informatii despre stoc temporar indisponibile
€ 75,49
€ 75,49 Buc. (fara TVA)
€ 89,83
€ 89,83 Buc. (cu TVA)
Infineon AIM SiC N-Channel MOSFET, 202 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R010M1TXKSA1
1
€ 75,49
€ 75,49 Buc. (fara TVA)
€ 89,83
€ 89,83 Buc. (cu TVA)
Infineon AIM SiC N-Channel MOSFET, 202 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R010M1TXKSA1
Informatii despre stoc temporar indisponibile
1
Informatii despre stoc temporar indisponibile
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10+ | € 67,30 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
202 A
Maximum Drain Source Voltage
1200 V
Serie
AIM
Tip pachet
PG-TO247-4
Timp montare
Through Hole
Numar pini
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Tara de origine
China