Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Channel Type
N
Maximum Continuous Drain Current
6.3 A, 8.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
15 mΩ, 28 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.5 nC @ 5 V, 8.5 nC @ 5 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Channel Type
N
Maximum Continuous Drain Current
6.3 A, 8.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
15 mΩ, 28 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.5 nC @ 5 V, 8.5 nC @ 5 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm


