Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Typical Gate Charge @ Vgs
3.8 nC @ 5 V, 6.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.05mm
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 2,90
€ 0,29 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,45
€ 0,345 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 2,90
€ 0,29 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,45
€ 0,345 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 20 | € 0,29 | € 2,90 |
30 - 140 | € 0,17 | € 1,70 |
150 - 740 | € 0,15 | € 1,50 |
750 - 1490 | € 0,12 | € 1,20 |
1500+ | € 0,10 | € 1,00 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Typical Gate Charge @ Vgs
3.8 nC @ 5 V, 6.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.05mm
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs