Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.05mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
3.4 nC @ 4.5 V
Latime
1.4mm
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 30,00
€ 0,20 Buc. (Livrat pe rola) (fara TVA)
€ 36,30
€ 0,242 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
150
€ 30,00
€ 0,20 Buc. (Livrat pe rola) (fara TVA)
€ 36,30
€ 0,242 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
150
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 150 - 725 | € 0,20 | € 5,00 |
| 750 - 1475 | € 0,18 | € 4,50 |
| 1500+ | € 0,18 | € 4,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.05mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
3.4 nC @ 4.5 V
Latime
1.4mm
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs


