Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Tip pachet
E-Line
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.77mm
Temperatura maxima de lucru
+150 °C
Inaltime
4.01mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 7,20
€ 0,72 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,71
€ 0,871 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 7,20
€ 0,72 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,71
€ 0,871 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 30 | € 0,72 | € 7,20 |
| 40 - 190 | € 0,64 | € 6,40 |
| 200 - 990 | € 0,56 | € 5,60 |
| 1000 - 1990 | € 0,49 | € 4,90 |
| 2000+ | € 0,41 | € 4,10 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Tip pachet
E-Line
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.77mm
Temperatura maxima de lucru
+150 °C
Inaltime
4.01mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs


