Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Tip pachet
E-Line
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Temperatura maxima de lucru
+150 °C
Latime
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.77mm
Inaltime
4.01mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 51,00
€ 1,02 Each (Supplied as a Tape) (fara TVA)
€ 61,71
€ 1,234 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
50
€ 51,00
€ 1,02 Each (Supplied as a Tape) (fara TVA)
€ 61,71
€ 1,234 Each (Supplied as a Tape) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Banda)
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Banda |
|---|---|---|
| 50 - 95 | € 1,02 | € 5,10 |
| 100 - 245 | € 0,79 | € 3,95 |
| 250 - 495 | € 0,74 | € 3,70 |
| 500+ | € 0,71 | € 3,55 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Tip pachet
E-Line
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Temperatura maxima de lucru
+150 °C
Latime
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.77mm
Inaltime
4.01mm
Temperatura minima de lucru
-55 °C
Detalii produs


