Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
100 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.77mm
Temperatura maxima de lucru
+150 °C
Inaltime
4.01mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 8,60
€ 0,43 Buc. (Intr-un pachet de 20) (fara TVA)
€ 10,41
€ 0,52 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
€ 8,60
€ 0,43 Buc. (Intr-un pachet de 20) (fara TVA)
€ 10,41
€ 0,52 Buc. (Intr-un pachet de 20) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
20
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 20 - 20 | € 0,43 | € 8,60 |
| 40 - 180 | € 0,41 | € 8,20 |
| 200 - 980 | € 0,38 | € 7,60 |
| 1000 - 1980 | € 0,37 | € 7,40 |
| 2000+ | € 0,34 | € 6,80 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
100 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.77mm
Temperatura maxima de lucru
+150 °C
Inaltime
4.01mm
Temperatura minima de lucru
-55 °C
Detalii produs


